STP25NM60N
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STMicroelectronics STP25NM60N

Manufacturer No:
STP25NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP25NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Part Number STP25NM60N STP26NM60N   STP25NM60ND   STP15NM60N   STP21NM60N   STP22NM60N   STP23NM60N   STP24NM60N   STP25NM50N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 20A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 60 nC @ 10 V 80 nC @ 10 V 37 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±30V ±25V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 1250 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 160W (Tc) 140W (Tc) 160W (Tc) 125W (Tc) 140W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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