STP11NM60N
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STMicroelectronics STP11NM60N

Manufacturer No:
STP11NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP11NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Part Number STP11NM60N STP11NM65N   STP11NM60ND   STP13NM60N   STP12NM60N   STP15NM60N   STP10NM60N   STP11NM50N   STP11NM60   STP11NM60A  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Active Obsolete Obsolete Active Obsolete Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 600 V 500 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 11A (Tc) 10A (Tc) 11A (Tc) 10A (Tc) 14A (Tc) 10A (Tc) 8.5A (Tc) 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V 455mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 410mOhm @ 5A, 10V 299mOhm @ 7A, 10V 550mOhm @ 4A, 10V 470mOhm @ 4.5A, 10V 450mOhm @ 5.5A, 10V 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 29 nC @ 10 V 30 nC @ 10 V 30 nC @ 10 V 30.5 nC @ 10 V 37 nC @ 10 V 19 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V 800 pF @ 50 V 850 pF @ 50 V 790 pF @ 50 V 960 pF @ 50 V 1250 pF @ 50 V 540 pF @ 50 V 547 pF @ 50 V 1000 pF @ 25 V 1211 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 90W (Tc) 110W (Tc) 90W (Tc) 90W (Tc) 90W (Tc) 125W (Tc) 70W (Tc) 70W (Tc) 160W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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