STP10NK60Z
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STMicroelectronics STP10NK60Z

Manufacturer No:
STP10NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP10NK60Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A TO220AB
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP10NK60Z STP13NK60Z   STP10NK80Z   STP10NK70Z   STP12NK60Z   STP14NK60Z   STP10NK50Z  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 700 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 13A (Tc) 9A (Tc) 8.6A (Tc) 10A (Tc) 13.5A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 550mOhm @ 4.5A, 10V 900mOhm @ 4.5A, 10V 850mOhm @ 4.5A, 10V 640mOhm @ 5A, 10V 500mOhm @ 6A, 10V 700mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 92 nC @ 10 V 72 nC @ 10 V 90 nC @ 10 V 59 nC @ 10 V 75 nC @ 10 V 39.2 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 2030 pF @ 25 V 2180 pF @ 25 V 2000 pF @ 25 V 1740 pF @ 25 V 2220 pF @ 25 V 1219 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 115W (Tc) 150W (Tc) 190W (Tc) 150W (Tc) 150W (Tc) 160W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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