STP10NK50Z
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STMicroelectronics STP10NK50Z

Manufacturer No:
STP10NK50Z
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP10NK50Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 9A TO220AB
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iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:39.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1219 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Part Number STP10NK50Z STP10NK60Z   STP14NK50Z   STP10NK80Z   STP10NK70Z   STP11NK50Z   STP15NK50Z   STP13NK50Z  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 800 V 700 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10A (Tc) 14A (Tc) 9A (Tc) 8.6A (Tc) 10A (Tc) 14A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 4.5A, 10V 750mOhm @ 4.5A, 10V 380mOhm @ 6A, 10V 900mOhm @ 4.5A, 10V 850mOhm @ 4.5A, 10V 520mOhm @ 4.5A, 10V 340mOhm @ 7A, 10V 480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 39.2 nC @ 10 V 70 nC @ 10 V 92 nC @ 10 V 72 nC @ 10 V 90 nC @ 10 V 68 nC @ 10 V 106 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1219 pF @ 25 V 1370 pF @ 25 V 2000 pF @ 25 V 2180 pF @ 25 V 2000 pF @ 25 V 1390 pF @ 25 V 2260 pF @ 25 V 1600 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 125W (Tc) 115W (Tc) 150W (Tc) 190W (Tc) 150W (Tc) 125W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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