STMicroelectronics-STN5PF02V - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	80mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	6 nC @ 2.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	412 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

STMicroelectronics STN5PF02V