STN2NE10
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STMicroelectronics STN2NE10

Manufacturer No:
STN2NE10
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STN2NE10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 2A SOT-223
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:305 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN2NE10 STN2NF10   STN2NE10L  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2.4A (Tc) 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 1A, 10V 260mOhm @ 1.2A, 10V 400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 14 nC @ 10 V 14 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 25 V 280 pF @ 25 V 345 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Tc) 3.3W (Tc) 2.5W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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