STMicroelectronics-STL10LN80K5 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	660mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	427 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerFlat™ (5x6) VHV
Package / Case:	8-PowerVDFN

STMicroelectronics STL10LN80K5