STI33N65M2
  • Share:

STMicroelectronics STI33N65M2

Manufacturer No:
STI33N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STI33N65M2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 24A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1790 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$4.25
84

Please send RFQ , we will respond immediately.

Similar Products

Part Number STI33N65M2 STI33N60M2  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 12A, 10V 125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41.5 nC @ 10 V 45.5 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1790 pF @ 100 V 1781 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

AON2260
AON2260
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 6A 6DFN
FDB8444TS
FDB8444TS
Fairchild Semiconductor
MOSFET N-CH 40V 20A/70A TO263-5
STFI10N62K3
STFI10N62K3
STMicroelectronics
MOSFET N CH 620V 8.4A I2PAKFP
SI4838BDY-T1-GE3
SI4838BDY-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 34A 8SO
FDY301NZ
FDY301NZ
onsemi
MOSFET N-CH 20V 200MA SC89-3
IRF9510SPBF
IRF9510SPBF
Vishay Siliconix
MOSFET P-CH 100V 4A D2PAK
IRFBC30ALPBF
IRFBC30ALPBF
Vishay Siliconix
MOSFET N-CH 600V 3.6A I2PAK
TK16G60W,RVQ
TK16G60W,RVQ
Toshiba Semiconductor and Storage
MOSFET N CH 600V 15.8A D2PAK
TPH3206LS
TPH3206LS
Transphorm
GANFET N-CH 600V 17A PQFN
APT80M60J
APT80M60J
Microchip Technology
MOSFET N-CH 600V 84A ISOTOP
IRLBL1304
IRLBL1304
Infineon Technologies
MOSFET N-CH 40V 185A SUPER D2PAK
IRF3706L
IRF3706L
Infineon Technologies
MOSFET N-CH 20V 77A TO262

Related Product By Brand

SMBJ15A-TR
SMBJ15A-TR
STMicroelectronics
TVS DIODE 15VWM 24.4VC SMB
P6KE68CARL
P6KE68CARL
STMicroelectronics
TVS DIODE 58VWM 121VC DO15
EVAL-FDA903Q-SA
EVAL-FDA903Q-SA
STMicroelectronics
EVAL BOARD FOR FDA903Q
STEVAL-TCS001V1
STEVAL-TCS001V1
STMicroelectronics
BOARD EVAL BASED ON STMPE2401
SPC560P44L3BEAAR
SPC560P44L3BEAAR
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
LCP22-150B1RL
LCP22-150B1RL
STMicroelectronics
IC TELECOM INTERFACE 8SO
LM258D
LM258D
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
TSV6392ID
TSV6392ID
STMicroelectronics
IC CMOS 2 CIRCUIT 8SOIC
LM258AWYDT
LM258AWYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M27W402-100B6
M27W402-100B6
STMicroelectronics
IC EPROM 4KBIT PARALLEL 40DIP
STISO621WTR
STISO621WTR
STMicroelectronics
DUAL CHANNEL DIGITAL ISOLATOR
SPBTLE-1STR
SPBTLE-1STR
STMicroelectronics
RX TXRX MOD BLUETOOTH CHIP SMD