STI30NM60N
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STMicroelectronics STI30NM60N

Manufacturer No:
STI30NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STI30NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 25A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number STI30NM60N STI10NM60N  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 12.5A, 10V 550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 50 V 540 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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