STMicroelectronics-STGYA120M65DF2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	160 A
Current - Collector Pulsed (Icm):	360 A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 120A
Power - Max:	625 W
Switching Energy:	1.8mJ (on), 4.41mJ (off)
Input Type:	Standard
Gate Charge:	420 nC
Td (on/off) @ 25°C:	66ns/185ns
Test Condition:	400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	202 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Exposed Pad
Supplier Device Package:	MAX247™

STMicroelectronics STGYA120M65DF2