STGP4M65DF2
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STMicroelectronics STGP4M65DF2

Manufacturer No:
STGP4M65DF2
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STGP4M65DF2 Datasheet
ECAD Model:
-
Description:
IGBT M SERIES 650V 4A LOW LOSS
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):8 A
Current - Collector Pulsed (Icm):16 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
Power - Max:68 W
Switching Energy:40µJ (on), 136µJ (off)
Input Type:Standard
Gate Charge:15.2 nC
Td (on/off) @ 25°C:12ns/86ns
Test Condition:400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr):133 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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$1.09
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Similar Products

Part Number STGP4M65DF2 STGP6M65DF2   STGF4M65DF2  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 8 A 12 A 8 A
Current - Collector Pulsed (Icm) 16 A 24 A 16 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A 2V @ 15V, 6A 2.1V @ 15V, 4A
Power - Max 68 W 88 W 23 W
Switching Energy 40µJ (on), 136µJ (off) 40µJ (on), 136µJ (off) 40µJ (on), 136µJ (off)
Input Type Standard Standard Standard
Gate Charge 15.2 nC 21.2 nC 15.2 nC
Td (on/off) @ 25°C 12ns/86ns 12ns/86ns 12ns/86ns
Test Condition 400V, 4A, 47Ohm, 15V 400V, 6A, 22Ohm, 15V 400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr) 133 ns 140 ns 133 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack
Supplier Device Package TO-220 TO-220 TO-220FP

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