STMicroelectronics-STGD3NB60SD-1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	6 A
Current - Collector Pulsed (Icm):	25 A
Vce(on) (Max) @ Vge, Ic:	1.5V @ 15V, 3A
Power - Max:	48 W
Switching Energy:	1.1mJ (on), 1.15mJ (off)
Input Type:	Standard
Gate Charge:	18 nC
Td (on/off) @ 25°C:	125µs/3.4µs
Test Condition:	480V, 3A, 1kOhm, 15V
Reverse Recovery Time (trr):	1.7 µs
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

STMicroelectronics STGD3NB60SD-1