STB26NM60N
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STMicroelectronics STB26NM60N

Manufacturer No:
STB26NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STB26NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$7.25
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Similar Products

Part Number STB26NM60N STB36NM60N   STB6NM60N   STB26NM60ND   STB21NM60N   STB22NM60N   STB23NM60N   STB24NM60N   STB25NM60N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 29A (Tc) 4.6A (Tc) 21A (Tc) 17A (Tc) 16A (Tc) 19A (Tc) 17A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V 105mOhm @ 14.5A, 10V 920mOhm @ 2.3A, 10V 175mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 83.6 nC @ 10 V 13 nC @ 10 V 54.6 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±25V ±25V ±25V ±25V ±30V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 2722 pF @ 100 V 420 pF @ 50 V 1817 pF @ 100 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V 1400 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 140W (Tc) 210W (Tc) 45W (Tc) 190W (Tc) 140W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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