STB23NM60N
  • Share:

STMicroelectronics STB23NM60N

Manufacturer No:
STB23NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STB23NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 19A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
363

Please send RFQ , we will respond immediately.

Similar Products

Part Number STB23NM60N STB26NM60N   STB24NM60N   STB25NM60N   STB23NM60ND   STB13NM60N   STB21NM60N   STB22NM60N   STB23NM50N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 20A (Tc) 17A (Tc) 21A (Tc) 19.5A (Tc) 11A (Tc) 17A (Tc) 16A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V 165mOhm @ 10A, 10V 190mOhm @ 8A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 10A, 10V 360mOhm @ 5.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V 70 nC @ 10 V 30 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±25V ±30V ±30V ±25V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 50 V 1800 pF @ 50 V 1400 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 790 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 1330 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 150W (Tc) 140W (Tc) 125W (Tc) 160W (Tc) 150W (Tc) 90W (Tc) 140W (Tc) 125W (Tc) 125W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSS215PH6327XTSA1
BSS215PH6327XTSA1
Infineon Technologies
MOSFET P-CH 20V 1.5A SOT23-3
FQA90N10V2
FQA90N10V2
Fairchild Semiconductor
MOSFET N-CH 100V 105A TO3P
STP17N62K3
STP17N62K3
STMicroelectronics
MOSFET N-CH 620V 15.5A TO220AB
TPH2R306NH1,LQ
TPH2R306NH1,LQ
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
AUIRF7749L2TR
AUIRF7749L2TR
Infineon Technologies
MOSFET N-CH 60V 36A DIRECTFET
IXFN64N60P
IXFN64N60P
IXYS
MOSFET N-CH 600V 50A SOT227B
IXTP64N10L2
IXTP64N10L2
IXYS
MOSFET N-CH 100V 64A TO220AB
SQD50N04-5M6_GE3
SQD50N04-5M6_GE3
Vishay Siliconix
MOSFET N-CH 40V 50A TO252AA
IPB60R385CPATMA1
IPB60R385CPATMA1
Infineon Technologies
MOSFET N-CH 600V 9A TO263-3
FDS2672-F085
FDS2672-F085
onsemi
MOSFET N-CH 200V 3.9A 8SOIC
AON7402L
AON7402L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 13.5A/39A 8DFN
SIS496EDNT-T1-GE3
SIS496EDNT-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 50A PPAK1212-8

Related Product By Brand

BYT261PIV-1000
BYT261PIV-1000
STMicroelectronics
DIODE MODULE 1KV 60A ISOTOP
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
BUL58D
BUL58D
STMicroelectronics
TRANS NPN 450V 8A TO220
LET9180
LET9180
STMicroelectronics
IC RF TRANSISTOR LDMOS M246
SCTWA10N120
SCTWA10N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STH272N6F7-6AG
STH272N6F7-6AG
STMicroelectronics
MOSFET N-CH 60V 180A H2PAK-6
STM32L476QEI6
STM32L476QEI6
STMicroelectronics
IC MCU 32BIT 512KB FLSH 132UFBGA
STA500
STA500
STMicroelectronics
IC AMP D DUAL/QUAD 60W PWRSO-36
M74HC367RM13TR
M74HC367RM13TR
STMicroelectronics
IC BUFFER NON-INVERT 6V 16SO
M24C32-DRMF3TG/K
M24C32-DRMF3TG/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8MLP
VIPER06HS
VIPER06HS
STMicroelectronics
IC OFFLINE SWITCH MULT TOP 10SSO
TLVH431AIL3T
TLVH431AIL3T
STMicroelectronics
IC VREF SHUNT ADJ 0.5% SOT23-3