STB23NM60N
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STMicroelectronics STB23NM60N

Manufacturer No:
STB23NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STB23NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 19A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB23NM60N STB26NM60N   STB24NM60N   STB25NM60N   STB23NM60ND   STB13NM60N   STB21NM60N   STB22NM60N   STB23NM50N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 20A (Tc) 17A (Tc) 21A (Tc) 19.5A (Tc) 11A (Tc) 17A (Tc) 16A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V 165mOhm @ 10A, 10V 190mOhm @ 8A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 10A, 10V 360mOhm @ 5.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 84 nC @ 10 V 70 nC @ 10 V 30 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±25V ±30V ±30V ±25V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 50 V 1800 pF @ 50 V 1400 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 790 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 1330 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 150W (Tc) 140W (Tc) 125W (Tc) 160W (Tc) 150W (Tc) 90W (Tc) 140W (Tc) 125W (Tc) 125W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263) D2PAK D2PAK D2PAK D2PAK D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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