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| Part Number | STB21NM60N-1 | STB25NM60N-1 | STB11NM60N-1 | STB21NM50N-1 |
|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | 21A (Tc) | 10A (Tc) | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V | 160mOhm @ 10.5A, 10V | 450mOhm @ 5A, 10V | 190mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | 84 nC @ 10 V | 31 nC @ 10 V | 65 nC @ 10 V |
| Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V | 2400 pF @ 50 V | 850 pF @ 50 V | 1950 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 140W (Tc) | 160W (Tc) | 90W (Tc) | 140W (Tc) |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK | I2PAK | I2PAK | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
