STB12NM60N-1
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STMicroelectronics STB12NM60N-1

Manufacturer No:
STB12NM60N-1
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STB12NM60N-1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10A I2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:410mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:960 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number STB12NM60N-1 STB11NM60N-1  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 410mOhm @ 5A, 10V 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 50 V 850 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 90W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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