STMicroelectronics-START499ETR - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	1.9GHz
Noise Figure (dB Typ @ f):	3.3dB @ 1.8GHz
Gain:	15dB
Power - Max:	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 160mA, 4V
Current - Collector (Ic) (Max):	600mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	SOT-343

STMicroelectronics START499ETR