STMicroelectronics-SCTW40N120G2VAG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	63 nC @ 18 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1230 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	290W (Tc)
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	HiP247™
Package / Case:	TO-247-3

STMicroelectronics SCTW40N120G2VAG