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| Part Number | SCTW35N65G2V | SCTWA35N65G2V |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V | 72mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 5V @ 1mA | 3.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V | 73 nC @ 20 V |
| Vgs (Max) | +22V, -10V | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V | 73000 pF @ 400 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 240W (Tc) | 208W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | HiP247™ | TO-247 Long Leads |
| Package / Case | TO-247-3 | TO-247-3 |
