STMicroelectronics-SCTW100N65G2AG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	162 nC @ 18 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	3315 pF @ 520 V
FET Feature:	-
Power Dissipation (Max):	420W (Tc)
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	HiP247™
Package / Case:	TO-247-3

STMicroelectronics SCTW100N65G2AG