STMicroelectronics-SCTH35N65G2V-7 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V, 20V
Rds On (Max) @ Id, Vgs:	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	73 nC @ 20 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	1370 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	208W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	H2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

STMicroelectronics SCTH35N65G2V-7