STMicroelectronics-SCTH100N65G2-7AG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	162 nC @ 18 V
Vgs (Max):	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	3315 pF @ 520 V
FET Feature:	-
Power Dissipation (Max):	360W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	H2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

STMicroelectronics SCTH100N65G2-7AG