STMicroelectronics-SCT040H65G3AG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V, 18V
Rds On (Max) @ Id, Vgs:	55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:	4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	39.5 nC @ 18 V
Vgs (Max):	+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds:	920 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	221W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	H2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

STMicroelectronics SCT040H65G3AG