STMicroelectronics-MJE802 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	MJE802	MJE802G	MJE803	MJE702	MJE800
Manufacturer	STMicroelectronics	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	PNP - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	4 A	4 A	4 A	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V	60 V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	2.5V @ 30mA, 1.5A	2.8V @ 40mA, 2A	2.5V @ 30mA, 1.5A	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	100nA	100µA	100µA	100µA	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V	750 @ 1.5A, 3V	750 @ 2A, 3V	750 @ 1.5A, 3V	750 @ 1.5A, 3V
Power - Max	40 W	40 W	40 W	40 W	40 W
Frequency - Transition	-	-	-	-	-
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-	-
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	SOT-32	TO-126	TO-126	TO-126	TO-126

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	SOT-32

STMicroelectronics MJE802