Please send RFQ , we will respond immediately.
| Part Number | IRF640 | IRF640S | IRF640L | IRF620 | IRF630 |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Vishay Siliconix | Vishay Siliconix | Harris Corporation | Harris Corporation |
| Product Status | Obsolete | Obsolete | Obsolete | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | 18A (Tc) | 18A (Tc) | 6A (Tc) | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 10V | 180mOhm @ 11A, 10V | 180mOhm @ 11A, 10V | 800mOhm @ 3A, 10V | 400mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | 70 nC @ 10 V | 70 nC @ 10 V | 27 nC @ 10 V | 43 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V | 1300 pF @ 25 V | 1300 pF @ 25 V | 350 pF @ 25 V | 800 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 125W (Tc) | 3.1W (Ta), 130W (Tc) | 3.1W (Ta), 130W (Tc) | 70W (Tc) | - |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | - |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220 | D²PAK (TO-263) | I2PAK | TO-220AB | TO-220AB |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-220-3 |
