STMicroelectronics-ESM2012DV - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	120 A
Voltage - Collector Emitter Breakdown (Max):	120 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1A, 100A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	1200 @ 100A, 5V
Power - Max:	175 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	ISOTOP
Supplier Device Package:	ISOTOP®

STMicroelectronics ESM2012DV