STMicroelectronics-BUR51 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	60 A
Voltage - Collector Emitter Breakdown (Max):	200 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 5A, 50A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5A, 4V
Power - Max:	350 W
Frequency - Transition:	16MHz
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-3

STMicroelectronics BUR51