STMicroelectronics-BULB49DT4 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	450 V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 800mA, 4A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	4 @ 7A, 10V
Power - Max:	80 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

STMicroelectronics BULB49DT4