STMicroelectronics-BULB128-1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 1A, 4A
Current - Collector Cutoff (Max):	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	14 @ 2A, 5V
Power - Max:	70 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262

STMicroelectronics BULB128-1