STMicroelectronics-BUL1102EFP - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	450 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 400mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	12 @ 2A, 5V
Power - Max:	30 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP

STMicroelectronics BUL1102EFP