STMicroelectronics-BU808DFI - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	8 A
Voltage - Collector Emitter Breakdown (Max):	700 V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 500mA, 5A
Current - Collector Cutoff (Max):	400µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5A, 5V
Power - Max:	52 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	ISOWATT-218-3
Supplier Device Package:	ISOWATT-218

STMicroelectronics BU808DFI