STMicroelectronics-BF259 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	300 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 6mA, 30mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 30mA, 10V
Power - Max:	5 W
Frequency - Transition:	90MHz
Operating Temperature:	200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39

STMicroelectronics BF259