STMicroelectronics-BD910 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD910	BD911	BD912	BD810
Manufacturer	STMicroelectronics	NTE Electronics, Inc	STMicroelectronics	onsemi
Product Status	Obsolete	Active	Active	Obsolete
Transistor Type	PNP	NPN	PNP	PNP
Current - Collector (Ic) (Max)	15 A	15 A	15 A	10 A
Voltage - Collector Emitter Breakdown (Max)	80 V	100 V	100 V	80 V
Vce Saturation (Max) @ Ib, Ic	3V @ 2.5A, 10A	3V @ 2.5A, 10A	3V @ 2.5A, 10A	1.1V @ 300mA, 3A
Current - Collector Cutoff (Max)	1mA	1mA	1mA	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 5A, 4V	40 @ 500mA, 4V	15 @ 5A, 4V	15 @ 4A, 2V
Power - Max	90 W	90 W	90 W	90 W
Frequency - Transition	3MHz	3MHz	3MHz	1.5MHz
Operating Temperature	150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220

STMicroelectronics BD910

Transistor Type:	PNP
Current - Collector (Ic) (Max):	15 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 2.5A, 10A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 5A, 4V
Power - Max:	90 W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220