STMicroelectronics-BD241C - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BD241C	BD241CG	BD242C	BD244C	BD241A
Manufacturer	STMicroelectronics	onsemi	Harris Corporation	Harris Corporation	Harris Corporation
Product Status	Active	Active	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	PNP	PNP	NPN
Current - Collector (Ic) (Max)	3 A	3 A	3 A	6 A	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 600mA, 3A	1.2V @ 600mA, 3A	1.2V @ 600mA, 3A	1.5V @ 1A, 6A	1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)	300µA	300µA	300µA	700µA	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V	25 @ 1A, 4V	25 @ 1A, 4V	15 @ 3A, 4V	25 @ 1A, 4V
Power - Max	40 W	40 W	40 W	65 W	40 W
Frequency - Transition	-	3MHz	-	-	-
Operating Temperature	150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220	TO-220	TO-220	TO-220AB	TO-220AB

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 600mA, 3A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 3A, 4V
Power - Max:	40 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

STMicroelectronics BD241C