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| Part Number | 1N5822 | 1N5822G | 1N5822H | 1N5825 | 1N5824 | 1N5820 | 1N5821 |
|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | onsemi | Taiwan Semiconductor Corporation | Microchip Technology | Solid State Inc. | NTE Electronics, Inc | Fairchild Semiconductor |
| Product Status | Active | Active | Active | Active | Active | Active | Active |
| Diode Type | Schottky | Schottky | Schottky | Schottky | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 40 V | 40 V | 40 V | 30 V | 20 V | 30 V |
| Current - Average Rectified (Io) | 3A | 3A | 3A | 5A | 15A | 3A | 3A |
| Voltage - Forward (Vf) (Max) @ If | 525 mV @ 3 A | 525 mV @ 3 A | 525 mV @ 3 A | 380 mV @ 5 A | 370 mV @ 5 A | 475 mV @ 3 A | 900 mV @ 9.4 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | - | - | - | - | - | - |
| Current - Reverse Leakage @ Vr | 2 mA @ 40 V | 2 mA @ 40 V | 500 µA @ 40 V | 10 mA @ 40 V | 10 mA @ 30 V | 500 µA @ 20 V | 2 mA @ 30 V |
| Capacitance @ Vr, F | - | - | 200pF @ 4V, 1MHz | - | - | 190pF @ 4V, 1MHz | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | DO-201AD, Axial | DO-201AA, DO-27, Axial | DO-201AD, Axial | Axial | Axial | DO-201AD, Axial | DO-201AA, DO-27, Axial |
| Supplier Device Package | DO-201AD | Axial | DO-201AD | TOP HAT | Axial | DO-201AD | DO-201 |
| Operating Temperature - Junction | 150°C (Max) | -65°C ~ 125°C | -55°C ~ 125°C | - | -65°C ~ 125°C | -65°C ~ 125°C | -50°C ~ 150°C |
