Siemens-BSP315 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50 V
Current - Continuous Drain (Id) @ 25°C:	1A
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	0.8Ohms
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	1.8W
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

Siemens BSP315