JAN1N5822US/TR
  • Share:

Microchip Technology JAN1N5822US/TR

Manufacturer No:
JAN1N5822US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5822US/TR Datasheet
ECAD Model:
-
Description:
DIODE SMALL-SIGNAL SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$65.78
7

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5822US/TR JAN1N5622US/TR   JAN1N5802US/TR   JAN1N5822US.TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Semtech Corporation
Product Status Active Active Active Discontinued at Digi-Key
Diode Type Schottky Standard Standard Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 1000 V 50 V 40 V
Current - Average Rectified (Io) 3A 1A 2.5A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 1.3 V @ 3 A 975 mV @ 2.5 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 2 µs 25 ns -
Current - Reverse Leakage @ Vr - 500 nA @ 1 V 1 µA @ 50 V 100 µA @ 40 V
Capacitance @ Vr, F - - 25pF @ 10V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, A SQ-MELF, A SQ-MELF
Supplier Device Package B, SQ-MELF D-5A D-5A -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 125°C

Related Product By Categories

NSR01L30P2T5G
NSR01L30P2T5G
onsemi
DIODE SCHOTTKY 30V 100MA SOD923
SS24B
SS24B
MDD
SCHOTTKY DIODE SMB 40V 2A
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
CFRMT105-HF
CFRMT105-HF
Comchip Technology
DIODE GEN PURP 600V 1A SOD123H
BYV29F-400HE3_A/P
BYV29F-400HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A ITO220AC
FMXA-4206S
FMXA-4206S
Sanken
DIODE GEN PURP 600V 20A TO3PF
JAN1N6622U
JAN1N6622U
Microsemi Corporation
DIODE GEN PURP 600V 1.2A A-MELF
6A1-T
6A1-T
Diodes Incorporated
DIODE GEN PURP 100V 6A R6
MBRS130LTR
MBRS130LTR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 1A SMB
SF62GHR0G
SF62GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A DO201AD
B180AE-13
B180AE-13
Diodes Incorporated
DIODE SCHOTTKY 80V 1A SMA
RB541VM-40TE-17
RB541VM-40TE-17
Rohm Semiconductor
RB541VM-40 IS STANDARD SCHOTTKY

Related Product By Brand

DSC1001DI2-020.0000
DSC1001DI2-020.0000
Microchip Technology
MEMS OSC XO 20.0000MHZ CMOS SMD
DSC1121BE2-155.5200T
DSC1121BE2-155.5200T
Microchip Technology
MEMS OSC XO 155.5200MHZ CMOS SMD
JAN1N4113UR-1
JAN1N4113UR-1
Microchip Technology
DIODE ZENER 19V DO213AA
JANTXV1N4372C-1/TR
JANTXV1N4372C-1/TR
Microchip Technology
VOLTAGE REGULATOR
APA1000-FGG1152I
APA1000-FGG1152I
Microchip Technology
IC FPGA 712 I/O 1152FBGA
DSPIC30F5011-20E/PT
DSPIC30F5011-20E/PT
Microchip Technology
IC MCU 16BIT 66KB FLASH 64TQFP
PIC16LF1512-I/SO
PIC16LF1512-I/SO
Microchip Technology
IC MCU 8BIT 3.5KB FLASH 28SOIC
PIC16LF18855-E/MV
PIC16LF18855-E/MV
Microchip Technology
IC MCU 8BIT 14KB FLASH 28UQFN
MIC5399-SGYMX-TR
MIC5399-SGYMX-TR
Microchip Technology
IC REG LINEAR 1.8V/3.3V 8DFN
MIC94310-PYM5-TR
MIC94310-PYM5-TR
Microchip Technology
IC REG LINEAR 3V 200MA SOT23-5
MIC5319-2.6YD5-TR
MIC5319-2.6YD5-TR
Microchip Technology
IC REG LIN 2.6V 500MA TSOT23-5
MIC37100-3.0BS
MIC37100-3.0BS
Microchip Technology
IC REG LINEAR 3V 1A SOT223-3