1N5822US/TR
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Microchip Technology 1N5822US/TR

Manufacturer No:
1N5822US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
1N5822US/TR Datasheet
ECAD Model:
-
Description:
DIODE SMALL-SIGNAL SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 40 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 125°C
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In Stock

$75.79
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Similar Products

Part Number 1N5822US/TR 1N5820US/TR   1N5821US/TR   1N5822US.TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Semtech Corporation
Product Status Active Active Active Discontinued at Digi-Key
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 20 V 30 V 40 V
Current - Average Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 500 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 40 V 100 µA @ 20 V 100 µA @ 30 V 100 µA @ 40 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, B SQ-MELF, B SQ-MELF
Supplier Device Package B, SQ-MELF B, SQ-MELF B, SQ-MELF -
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

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