1N5809US/TR
  • Share:

Microchip Technology 1N5809US/TR

Manufacturer No:
1N5809US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
1N5809US/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$8.22
62

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N5809US/TR 1N5802US/TR   1N5804US/TR   1N5806US/TR   1N5807US/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 50 V 100 V 150 V 50 V
Current - Average Rectified (Io) 3A 1A 1A 1A 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A 875 mV @ 1 A 875 mV @ 1 A 975 mV @ 2.5 A 875 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 25 ns 25 ns 25 ns 30 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V 1 µA @ 50 V 1 µA @ 100 V 1 µA @ 150 V 5 µA @ 50 V
Capacitance @ Vr, F 60pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz 60pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, B
Supplier Device Package B, SQ-MELF D-5A D-5A D-5A B, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

VSS8D2M15-M3/I
VSS8D2M15-M3/I
Vishay General Semiconductor - Diodes Division
2A, 150V, SLIMSMAW TRENCH SKY
NSR05F30NRT5G
NSR05F30NRT5G
Sanyo
SCHOTTKY BARRIER DIODE
BAV5004LP-7B
BAV5004LP-7B
Diodes Incorporated
DIODE GEN PURP 350V 300MA 2DFN
1N5397
1N5397
NTE Electronics, Inc
R-SI 600V 1.5A
MB510-AU_R1_000A2
MB510-AU_R1_000A2
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SBR160S23-7
SBR160S23-7
Diodes Incorporated
DIODE SBR 60V 900MA SOT23-3
B0540WQ-7-F
B0540WQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 500MA SOD123
1N4150W-E3-18
1N4150W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 200MA SOD123
JAN1N5619/TR
JAN1N5619/TR
Microchip Technology
RECTIFIER UFR,FRR
MA3X78600L
MA3X78600L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 100MA MINI3
CDBA160SLR-HF
CDBA160SLR-HF
Comchip Technology
DIODE SCHOTTKY 60V 1A DO214AC
ES2DV R5G
ES2DV R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

MASMBG16AE3
MASMBG16AE3
Microchip Technology
TVS DIODE 16VWM 26VC SMBG
DSC1001CI2-060.0000
DSC1001CI2-060.0000
Microchip Technology
MEMS OSC XO 60.0000MHZ CMOS SMD
DSC1101DI5-125.0000
DSC1101DI5-125.0000
Microchip Technology
MEMS OSC LOW JITTER 125MHZ LVCMO
1N758A-1/TR
1N758A-1/TR
Microchip Technology
VOLTAGE REGULATOR
BZV55C16/TR
BZV55C16/TR
Microchip Technology
VOLTAGE REGULATOR
1N4706/TR
1N4706/TR
Microchip Technology
VOLTAGE REGULATOR
PIC16LF1509T-I/SO
PIC16LF1509T-I/SO
Microchip Technology
IC MCU 8BIT 14KB FLASH 20SOIC
COM20020ILJP
COM20020ILJP
Microchip Technology
IC CONTROLLER ARCNET 28PLCC
SY100EP33VZI-TR
SY100EP33VZI-TR
Microchip Technology
IC DIVIDER /4 5V/3.3V 8-SOIC
SY100ELT24ZC TR
SY100ELT24ZC TR
Microchip Technology
IC TRNSLTR UNIDIRECTIONAL 8SOIC
AT25080A-10PI-1.8
AT25080A-10PI-1.8
Microchip Technology
IC EEPROM 8KBIT SPI 20MHZ 8DIP
SST39SF040-45-4I-WHE-T
SST39SF040-45-4I-WHE-T
Microchip Technology
IC FLASH 4MBIT PARALLEL 32TSOP