Renesas Electronics America Inc-UPA895TS-T3-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	5.5V
Frequency - Transition:	6.5GHz
Noise Figure (dB Typ @ f):	1.9dB ~ 2.5dB @ 2GHz
Gain:	-
Power - Max:	130mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 1V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	6-Super Lead-Less MiniMold

Renesas Electronics America Inc UPA895TS-T3-A