Renesas Electronics America Inc-UPA801T-T1-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.2dB @ 1GHz
Gain:	9dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 7mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

Renesas Electronics America Inc UPA801T-T1-A