UPA2820T1S-E2-AT
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Renesas Electronics America Inc UPA2820T1S-E2-AT

Manufacturer No:
UPA2820T1S-E2-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
UPA2820T1S-E2-AT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8HVSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2330 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 16W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HWSON (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number UPA2820T1S-E2-AT UPA2825T1S-E2-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 22A, 10V 4.6mOhm @ 24A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 10 V 2600 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 16W (Tc) 1.5W (Ta), 16.5W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-HWSON (3.3x3.3) 8-HWSON (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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