UPA2812T1L-E1-AT
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Renesas Electronics America Inc UPA2812T1L-E1-AT

Manufacturer No:
UPA2812T1L-E1-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
UPA2812T1L-E1-AT Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 30A 8HVSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3740 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 52W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HVSON (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number UPA2812T1L-E1-AT UPA2813T1L-E1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.8mOhm @ 30A, 10V 6.2mOhm @ 27A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 10 V 3130 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 52W (Tc) 1.5W (Ta), 52W (Tc)
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-HVSON (3.3x3.3) 8-HVSON (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN

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