UPA2811T1L-E1-AY
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Renesas Electronics America Inc UPA2811T1L-E1-AY

Manufacturer No:
UPA2811T1L-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2811T1L-E1-AY Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$0.67
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Similar Products

Part Number UPA2811T1L-E1-AY UPA2810T1L-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete
FET Type - P-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 40 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - 1860 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 1.5W (Ta)
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - 8-DFN3333 (3.3x3.3)
Package / Case - 8-VDFN Exposed Pad

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