UPA2810T1L-E2-AY
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Renesas Electronics America Inc UPA2810T1L-E2-AY

Manufacturer No:
UPA2810T1L-E2-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2810T1L-E2-AY Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 13A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1860 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN3333 (3.3x3.3)
Package / Case:8-VDFN Exposed Pad
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Similar Products

Part Number UPA2810T1L-E2-AY UPA2810T1L-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 12mOhm @ 13A, 10V 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 10 V 1860 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3) 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad 8-VDFN Exposed Pad

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