UPA2803T1L-E2-AY
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Renesas Electronics America Inc UPA2803T1L-E2-AY

Manufacturer No:
UPA2803T1L-E2-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2803T1L-E2-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 20A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.8mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2450 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-DFN3333 (3.3x3.3)
Package / Case:8-VDFN Exposed Pad
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In Stock

$1.18
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Similar Products

Part Number UPA2803T1L-E2-AY UPA2802T1L-E2-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 4.5V 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4 V 16 nC @ 5 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 10 V 1800 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3) 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad 8-VDFN Exposed Pad

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