UPA2800T1L-E1-AY
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Renesas Electronics America Inc UPA2800T1L-E1-AY

Manufacturer No:
UPA2800T1L-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2800T1L-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 17A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:7.3mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-DFN3333 (3.3x3.3)
Package / Case:8-VDFN Exposed Pad
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In Stock

$0.73
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Similar Products

Part Number UPA2800T1L-E1-AY UPA2806T1L-E1-AY   UPA2810T1L-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active Obsolete
FET Type N-Channel - P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta) - 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 7.3mOhm @ 17A, 10V - 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V - 40 nC @ 10 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 15 V - 1860 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - - 1.5W (Ta)
Operating Temperature - - 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3) - 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad - 8-VDFN Exposed Pad

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