UPA2751GR-E1-AT
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Renesas Electronics America Inc UPA2751GR-E1-AT

Manufacturer No:
UPA2751GR-E1-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2751GR-E1-AT Datasheet
ECAD Model:
-
Description:
POWER, N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:9A, 8A
Rds On (Max) @ Id, Vgs:15.5mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1040pF @ 10V
Power - Max:2W
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:8-PSOP
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$0.95
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Similar Products

Part Number UPA2751GR-E1-AT UPA2791GR-E1-AT   UPA2756GR-E1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) N and P-Channel 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 60V
Current - Continuous Drain (Id) @ 25°C 9A, 8A 5A 4A
Rds On (Max) @ Id, Vgs 15.5mOhm @ 4.5A, 10V 36mOhm @ 3A, 10V 105mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V 10nC @ 10V 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 10V 400pF @ 10V 260pF @ 10V
Power - Max 2W 2W 2W
Operating Temperature - 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width) 8-SOIC (0.173", 4.40mm Width) 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-PSOP 8-PSOP 8-PSOP

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