UPA2737GR-E1-AT
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Renesas Electronics America Inc UPA2737GR-E1-AT

Manufacturer No:
UPA2737GR-E1-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
UPA2737GR-E1-AT Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 11A 8SOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.173", 4.40mm Width)
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In Stock

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Similar Products

Part Number UPA2737GR-E1-AT UPA2737GR-E1-AX   UPA2717GR-E1-AT   UPA2734GR-E1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active Active Active
FET Type P-Channel P-Channel - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 30 V 30 V - -
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 11A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V - -
Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V 13mOhm @ 11A, 10V - -
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 45 nC @ 10 V - -
Vgs (Max) ±20V ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 10 V 1750 pF @ 10 V - -
FET Feature - - - -
Power Dissipation (Max) 1.1W (Ta) 2.5W (Ta) - -
Operating Temperature 150°C (TJ) 150°C - -
Mounting Type Surface Mount Surface Mount - -
Supplier Device Package 8-SOP 8-SOP - -
Package / Case 8-SOIC (0.173", 4.40mm Width) 8-SOIC (0.154", 3.90mm Width) - -

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