UPA2734GR-E1-AT
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Renesas Electronics America Inc UPA2734GR-E1-AT

Manufacturer No:
UPA2734GR-E1-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2734GR-E1-AT Datasheet
ECAD Model:
-
Description:
P-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$0.61
1,499

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Similar Products

Part Number UPA2734GR-E1-AT UPA2734GR-E2-AT   UPA2754GR-E1-AT   UPA2737GR-E1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Obsolete
FET Type - - - P-Channel
Technology - - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - - 30 V
Current - Continuous Drain (Id) @ 25°C - - - 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - - 4.5V, 10V
Rds On (Max) @ Id, Vgs - - - 13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs - - - 45 nC @ 10 V
Vgs (Max) - - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - 1750 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) - - - 1.1W (Ta)
Operating Temperature - - - 150°C (TJ)
Mounting Type - - - Surface Mount
Supplier Device Package - - - 8-SOP
Package / Case - - - 8-SOIC (0.173", 4.40mm Width)

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